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| PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC = 1 Amp * Ptot=1 Watt 2N6726 2N6727 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb= 25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 2N6726 -40 -30 -5 -2 -1 1 E-Line TO92 Compatible 2N6727 -50 -40 UNIT V V V A A W C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Turn-On Voltage SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) VBE(on) 55 60 50 50 -40 -30 -5 -0.1 -0.1 -0.5 -1.2 55 60 50 50 2N6726 MIN. MAX. -50 -40 -5 -0.1 -0.1 -0.5 -1.2 2N6727 MIN. MAX. V V V A A A UNIT CONDITIONS. IC=-1mA, IE=0 IC=-10mA, IB=0* IE=-1mA, IC=0 VCB=-40V, IE=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-1A, IB=-100mA* IC=-1A, VCE=-1V* IC=-10mA, VCE=-1V* IC=-100mA, VCE=-1V* IC=-1A, VCE=-1V* V V Static Forward hFE Current Transfer Ratio Transition Frequency Collector Base Capacitance fT CCB 250 500 30 3-8 250 500 30 MHz pF IC=-50mA, VCE=-10V VCE=-10V, f=1MHz |
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